The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2007
Filed:
Feb. 18, 2004
Jennifer Wang, Redondo Beach, CA (US);
Huai-min Sheng, Cerritos, CA (US);
Mike Barsky, Sherman Oaks, CA (US);
Jennifer Wang, Redondo Beach, CA (US);
Huai-Min Sheng, Cerritos, CA (US);
Mike Barsky, Sherman Oaks, CA (US);
Northrop Grumman Corporation, Los Angeles, CA (US);
Abstract
Accordingly, this invention relates to an dry etching process for semiconductor wafers. More particularly, the present invention discloses a dry etching process including a halogen etchant () and a nitrogen gas () that selectively etches a compound semiconductor material () faster than the front-side metal layers (A)(B). Further, the dry etching process produces a vertical wall profile on compound semiconductor material () in both X () and Y () crystalline directions without undercutting the top of a via-opening.