Company Filing History:
Years Active: 2004-2011
Title: Huade Walter Yao: Innovator in Integrated Circuit Technology
Introduction
Huade Walter Yao is a prominent inventor based in Livermore, CA (US). He has made significant contributions to the field of integrated circuit technology, holding a total of 3 patents. His work focuses on enhancing the reliability and efficiency of semiconductor devices.
Latest Patents
One of his latest patents is for an integrated circuit contact system. This system includes the formation of a contact plug in a dielectric, along with a first barrier layer in a trench in the dielectric and on the contact plug. The process involves removing a portion of the first barrier layer from the bottom and depositing it on the sidewall, followed by the formation of a second barrier layer over the first. This innovative approach aims to improve the performance of integrated circuits.
Another notable patent is a method and system for Joule heating characterization. This method establishes a relationship between Joule heating in a conductor and the current density within it. By performing wafer level measurements, Yao determines the temperature coefficient of resistance and thermal resistance of the conductor. This information is crucial for designing reliable semiconductor devices.
Career Highlights
Throughout his career, Huade Walter Yao has worked with leading companies in the semiconductor industry, including Advanced Micro Devices Corporation and Spansion LLC. His expertise in integrated circuits has made him a valuable asset in these organizations.
Collaborations
Yao has collaborated with several professionals in his field, including Amit P. Marathe and Van-Hung Pham. These collaborations have contributed to the advancement of technology in integrated circuits.
Conclusion
Huade Walter Yao's innovative work in integrated circuit technology and his contributions to Joule heating characterization highlight his importance in the field. His patents and collaborations reflect a commitment to enhancing semiconductor device reliability and performance.