Hua Yong Hu

Title: Hua Yong Hu and His FinFET Semiconductor Invention.

Introduction

Hua Yong Hu is an inventor based in Shanghai, China, associated with semiconductor manufacturing and FinFET technology. His listed patent count is 1 patent.

Latest Patents

Hu’s listed patent is “FinFET Semiconductor Structure with Equal Pitches and Fabrication Method Thereof.” It describes a semiconductor structure and a fabrication method designed to form fins at substantially equal pitches across device and isolation regions.

The method forms protective layers along the fin sidewalls, then uses successive etching processes to create dummy fins in the isolation regions. After removing the protective layers, isolation structures are formed at a height below the device-region fins and above the dummy fins. The approach addresses fin formation and isolation within a FinFET structure.

Career Highlights

Hu is associated with Semiconductor Manufacturing International (Shanghai) Corporation and Semiconductor Manufacturing International (Beijing) Corporation. These affiliations connect his work with semiconductor manufacturing in China.

Collaborations

Hu’s listed coworker is Yi Lin, who is a woman. Their shared professional context is associated with semiconductor manufacturing.

Conclusion

Hua Yong Hu’s listed patent focuses on equal-pitch FinFET structures and a fabrication process that integrates fins, dummy fins, and isolation structures.