Hu Lianfeng

Title: Hu Lianfeng - Innovator in Semiconductor Technology

Introduction

Hu Lianfeng is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure that enhances capacitance density.

Latest Patents

Hu Lianfeng holds a patent for a semiconductor structure and method for forming a semiconductor structure. This patent describes a method that includes providing a base, forming a first electrode layer on the base, and creating a capacitance dielectric layer on both the top and sidewalls of the first electrode layer. The second electrode layer is then formed to conformally cover the capacitance dielectric layer. This innovative approach increases the effective area between the second and first electrode layers, resulting in a capacitor structure that includes five parallel capacitances. This design significantly improves capacitance density under equal base area conditions.

Career Highlights

Throughout his career, Hu Lianfeng has worked with notable companies in the semiconductor industry. He has been associated with Semiconductor Manufacturing International Corporation in both Beijing and Shanghai. His experience in these organizations has contributed to his expertise in semiconductor technologies.

Collaborations

Hu Lianfeng has collaborated with several professionals in his field, including Hu Youcun and Yang Ming. These collaborations have further enriched his work and innovations in semiconductor technology.

Conclusion

Hu Lianfeng is a distinguished inventor whose contributions to semiconductor technology have made a significant impact. His innovative patent demonstrates his commitment to advancing the field and improving capacitance density in semiconductor structures.