Company Filing History:
Years Active: 2024-2025
Title: Hsun-Kuo Hsiao: Innovator in Wafer Measurement Technology
Introduction
Hsun-Kuo Hsiao is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the measurement of overlay shifts in bonded wafers. With a total of 2 patents to his name, Hsiao's work is crucial for enhancing the precision of semiconductor manufacturing processes.
Latest Patents
Hsiao's latest patents focus on innovative methods for measuring overlay shifts of bonded wafers. The first patent describes a measurement pattern that includes a top wafer pattern and a bottom wafer pattern. The top wafer pattern features a first portion with a width Wx1 measured along a first axis, while the bottom wafer pattern includes a first part with a width Wx2, also measured along the same axis. These patterns are separated by a target distance Dx, and the measurement pattern adheres to specific measurement formulas. The second patent similarly outlines a measurement pattern for monitoring overlay shifts, emphasizing the importance of precise measurements in semiconductor fabrication.
Career Highlights
Hsun-Kuo Hsiao is currently employed at Taiwan Semiconductor Manufacturing Company Ltd. His work at this leading semiconductor manufacturer has positioned him at the forefront of technological advancements in the industry. Hsiao's expertise in wafer measurement techniques has contributed to the company's reputation for high-quality semiconductor products.
Collaborations
Hsiao has collaborated with notable colleagues, including Ming-Sung Kuo and Chung-Cheng Chen. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the semiconductor field.
Conclusion
Hsun-Kuo Hsiao's contributions to wafer measurement technology are invaluable to the semiconductor industry. His innovative patents and collaborative efforts with colleagues highlight his commitment to advancing technology in this critical field.
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