Taiwan Semiconductor Manufacturing Comp. Ltd.

Hsun-Kuo Hsiao

Po-Wei Chen

Chung-Cheng Chen

Ming-Sung Kuo

A measurement pattern for monitoring overlay shift of bonded wafers includes a top wafer pattern and a bottom wafer pattern. The top wafer pattern includes a first portion with a width Wx1 measured along a first axis. The bottom wafer pattern includes a first part with a width Wx2 measured along the first axis, wherein the first portion of the top wafer pattern and the first part of the bottom wafer pattern are separated by a target distance Dx, and wherein the measurement pattern satisfies the following measurement formulas:

Method for measuring overlay shift of bonded wafers

A measurement pattern for monitoring overlay shift of bonded wafers includes a top wafer pattern and a bottom wafer pattern. The top wafer pattern includes a first portion with a width Wxmeasured along a first axis. The bottom wafer pattern includes a first part with a width Wxmeasured along the first axis, wherein the first portion of the top wafer pattern and the first part of the bottom wafer pattern are separated by a target distance Dx, and wherein the measurement pattern satisfies the following measurement formulas:2;1;

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Hsinchu, Taiwan

Hsun-Kuo Hsiao