Zhongli, Taiwan

Hsueh-I Chen

This inventor holds 1 USPTO granted patent. Top assignee: National Central University. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsueh-I Chen. Retrieved from https://idiyas.com/inventor/hsueh-i-chen-k2r6jvpo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 4.0

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Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Hsueh-I Chen: Innovator in Crystal-Growing Technology

Introduction

Hsueh-I Chen is a notable inventor based in Zhongli, Taiwan. He has made significant contributions to the field of crystal-growing technology. His innovative approach has led to advancements that enhance the quality of crystal ingots.

Latest Patents

Hsueh-I Chen holds a patent for a gas flow guiding device designed for use in a crystal-growing furnace. This invention features an insulation layer that encloses a crucible, a gas inlet mounted in the upper insulation layer, and a gas exit formed in the lateral insulation layer. The device includes a series of guide plates arranged radially around the gas inlet, which effectively directs the gas flow. This design ensures that the free surface of the melt is blown by the guided gas flow, efficiently removing impurities and improving the overall quality of the crystal ingot produced.

Career Highlights

Hsueh-I Chen is affiliated with National Central University, where he continues to engage in research and development in his field. His work has garnered attention for its practical applications in enhancing crystal quality.

Collaborations

Hsueh-I Chen collaborates with esteemed colleagues, including Jyh-Chen Chen and Ying-Yang Teng, who contribute to his research endeavors.

Conclusion

Hsueh-I Chen's innovative contributions to crystal-growing technology exemplify the impact of dedicated research and development in advancing material science. His patent for the gas flow guiding device is a testament to his commitment to improving crystal quality and efficiency in production.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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