The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2015

Filed:

Dec. 02, 2010
Applicants:

Jyh-chen Chen, Jhongli, TW;

Ying-yang Teng, Jhongli, TW;

Chung-wei LU, Jhongli, TW;

Hsueh-i Chen, Jhongli, TW;

Inventors:

Jyh-Chen Chen, Jhongli, TW;

Ying-Yang Teng, Jhongli, TW;

Chung-Wei Lu, Jhongli, TW;

Hsueh-I Chen, Jhongli, TW;

Assignee:

National Central University, Taoyuan County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/02 (2006.01); C30B 11/00 (2006.01); C30B 28/06 (2006.01);
U.S. Cl.
CPC ...
C30B 11/006 (2013.01); C30B 28/06 (2013.01);
Abstract

The present invention relates to a gas flow guiding device for use in a crystal-growing furnace. The gas flow guiding device has an insulation layer enclosing a crucible, a gas inlet mounted in the upper insulation layer, and a gas exit formed in the lateral insulation layer. A plurality of guide plates are radially arranged around the opening of the gas inlet, so that the free surface of the melt is blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.


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