Hsueh-Hsing Liu

Title: Hsueh-Hsing Liu: Innovator in Gallium Nitride Technology

Introduction

Hsueh-Hsing Liu is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in gallium nitride (GaN) applications. With a total of 5 patents, Liu's work focuses on enhancing the performance and manufacturing processes of semiconductor elements.

Latest Patents

One of Liu's latest patents is a growth method for reducing defect density of gallium nitride. This innovative method involves sequentially forming a buffer growth layer, a stress release layer, and a first nanometer cover layer on a substrate. The first nanometer cover layer features multiple openings interconnected with the stress release layer. This process allows for the growth of a first island in each opening, followed by the formation of a dislocated island structure. This approach not only simplifies manufacturing but also increases yield rates by minimizing variations in the manufacturing environment. Additionally, the epitaxial lateral overgrowth (ELOG) technique enhances the characteristics of GaN optoelectronic semiconductor elements.

Another notable patent by Liu is for a semiconductor element having a high breakdown voltage. This invention includes a substrate, a buffer layer, a semiconductor composite layer, and a bias electrode. The buffer layer contains a high edge dislocation defect density area, which contributes to the formation of a second high edge dislocation defect density area in the semiconductor composite layer. This design generates a virtual gate effect that captures electrons, resulting in an extended depletion region that reduces leakage current and increases the breakdown voltage of the semiconductor element.

Career Highlights

Hsueh-Hsing Liu has worked with esteemed institutions such as National Central University and Tekcore Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Liu has collaborated with notable colleagues, including Jen-Inn Chyi and Geng-Yen Lee. Their combined expertise has contributed to advancements in the field of semiconductor research and development.

Conclusion

Hsueh-Hsing Liu's contributions to gallium nitride technology and semiconductor elements have positioned him as a key figure in the industry. His innovative patents and collaborative efforts continue to influence the future of semiconductor technology.