The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Nov. 03, 2008
Jen-inn Chyi, Jhongli, TW;
Guan-ting Chen, Jhongli, TW;
Hsueh-hsing Liu, Jhongli, TW;
National Central University, Jhongli, TW;
Abstract
The present invention provides a method for fabricating a single-crystalline substrate containing gallium nitride (GaN) comprising the following steps. First, form a plurality of island containing GaN on a host substrate. Next, use the plurality of islands containing GaN as a mask to etch the substrate and form an uneven host substrate. Then, perform epitaxy on the uneven host substrate to make the islands containing GaN grow in size and merge into a continuous single-crystalline film containing GaN. Finally, separate the single-crystalline film containing GaN from the uneven host substrate to obtain the single-crystalline substrate containing GaN. According to the present invention, process time can be saved and yield can be improved.