Hsinchu, Taiwan

Hsuan-Ming Huang

USPTO Granted Patents = 6 

Average Co-Inventor Count = 3.8

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020-2025

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6 patents (USPTO):Explore Patents

Title: Hsuan-Ming Huang: Innovator in Semiconductor Technology

Introduction

Hsuan-Ming Huang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of Hsuan-Ming Huang's latest patents is titled "Passivation layers with rounded corners." This patent describes a structure with passivation layers featuring rounded corners and outlines a method for forming such a structure. The method involves creating a first insulating layer on a substrate that includes a first conductive structure. An opening is formed in the first insulating layer to expose the first conductive structure, followed by the formation of a second conductive structure on the first insulating layer. The process includes etching to create rounded corners between the sidewall of the second conductive structure and the top surface of the first insulating layer, culminating in the deposition of a second insulating layer.

Another notable patent is "Capacitor formed with high resistance layer and method of manufacturing same." This patent provides a method for producing a semiconductor structure that includes at least one capacitor. The method consists of forming a first metal layer, a second metal layer, and a third high resistance (HiR) layer interposed between the first and second metal layers. This innovative approach allows for the definition of capacitors that enhance the functionality of semiconductor devices.

Career Highlights

Hsuan-Ming Huang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in advancing semiconductor fabrication techniques and improving device performance.

Collaborations

Hsuan-Ming Huang has collaborated with notable colleagues, including Mingni Chang and Ming-Yih Wang, who have contributed to his research and development efforts in semiconductor technology.

Conclusion

Hsuan-Ming Huang's innovative work in semiconductor technology, particularly through his recent patents, showcases his commitment to advancing the field. His contributions continue to influence the development of more efficient and reliable semiconductor devices.

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