Company Filing History:
Years Active: 2003
Title: **Innovator Spotlight: Hsiu-Shan Lin**
Introduction
Hsiu-Shan Lin is an accomplished inventor based in Taichung, Taiwan. With a focus on advancements in semiconductor technology, Lin has made significant contributions through his innovative methods.
Latest Patents
Hsiu-Shan Lin holds a patent for a novel "Method for Fabricating a Gate Dielectric Layer." This invention pertains to the formation of a gate dielectric layer essential for semiconductor devices. The process involves treating a base oxide layer by utilizing a remote plasma nitridation procedure followed by thermal annealing, culminating in the successful fabrication of the gate dielectric layer.
Career Highlights
Lin is currently affiliated with United Microelectronics Corporation, a prominent player in the semiconductor industry. His work at the company showcases his dedication to research and development, particularly in the area of advanced semiconductor materials and processes.
Collaborations
Throughout his career, Lin has collaborated with esteemed colleagues, including Chuan-Hsi Liu and Yu-Yin Lin. These partnerships highlight the collaborative nature of innovation in the technology sector, where teamwork often leads to groundbreaking inventions.
Conclusion
Hsiu-Shan Lin's contributions to the field of semiconductor technology through his innovative patent exemplify the spirit of invention. His work at United Microelectronics Corporation and collaboration with fellow innovators underscore the importance of teamwork in driving technological advancements. Lin's work is a testament to the impact that dedicated inventors have on shaping the future of technology.