The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Jan. 28, 2002
Chuan-Hsi Liu, Hsin-Chu, TW;
Hsiu-Shan Lin, Taichung, TW;
Yu-Yin Lin, Taichung, TW;
Tung-Ming Pan, Taipei, TW;
Kuo-Tai Huang, Hsin-Chu, TW;
Abstract
This invention relates to a method for forming a gate dielectric layer, and, more particularly, to a method for treating a base oxide layer by using a remote plasma nitridation procedure and a thermal annealing treatment in turn to form the gate dielectric layer. The first step of the present invention is to form a base oxide layer on a substrate of a wafer. The base oxide layer can be formed using any kind of method. Then nitrogen ions are introduced into the base oxide layer using the remote plasma nitridation procedure to form a remote plasma nitrided oxide layer. Finally, the wafer is placed in a reaction chamber which comprises oxygen (O ) or nitric monoxide (NO) to treat the remote plasma nitrided oxide layer using the thermal annealing procedure and the gate dielectric layer of the present invention is formed.