Hsinchu, Taiwan

Hsiu-Han Liao

This inventor holds 2 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1999-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsiu-Han Liao. Retrieved from https://idiyas.com/inventor/hsiu-han-liao-u0d6ldwe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 1999-2000

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2 patents (USPTO):Explore Patents

Title: Inventor Spotlight: Hsiu-Han Liao

Introduction

Hsiu-Han Liao is a noted inventor hailing from Hsin-chu, Taiwan. With a focus on advancements in semiconductor technology, she has made significant contributions to the field with two patents to her name. Her work primarily revolves around improving the reliability and efficiency of field-effect transistors (FETs).

Latest Patents

Hsiu-Han Liao’s latest patents include:

1. **High breakdown voltage twin well device with source/drain regions widely** - This patent describes an FET semiconductor device consisting of a doped silicon semiconductor substrate. The substrate is doped with a first type of dopant, creating an N-well within the surface of a P-substrate, with a P-well formed within the N-well to establish a twin well configuration. The device features field oxide regions located above the borders between the wells and surrounding substrate regions, along with a gate electrode structure positioned over the P-well. Importantly, the source and drain regions of the substrate are self-aligned with the gate structure, spaced appropriately from the field oxide regions.

2. **Method of making high breakdown voltage twin well device** - This patent mirrors the technology described in her first patent, outlining the construction process of the FET semiconductor device. It elaborates on the substrate's doping, well formations, and the self-alignment of the source and drain regions, emphasizing the same notable features and improvements.

Career Highlights

Hsiu-Han Liao works at Taiwan Semiconductor Manufacturing Company Ltd., a leading entity in the semiconductor industry. Her expertise in semiconductor technology has been instrumental in developing advanced devices that enhance the performance and efficiency of modern electronics.

Collaborations

Throughout her career, Hsiu-Han has collaborated with notable peers, including Jian-Hsing Lee and Kuo-Reay Peng. The synergy within this team has fostered innovative solutions and advanced research, contributing to their collective success in the field of semiconductor fabrication.

Conclusion

Hsiu-Han Liao exemplifies the spirit of innovation in semiconductor technology. With her impressive patents and collaborations, she continues to influence the industry positively. Her work not only showcases her expertise but also the importance of teamwork in advancing technological innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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