Hsing-San Lee

Title: The Innovative Mind of Hsing-San Lee

Introduction

Hsing-San Lee, an accomplished inventor based in Essex Junction, Vermont, has made significant contributions to the field of semiconductor technology. With a portfolio of ten patents to his name, Lee's innovations are at the forefront of advancements in memory devices.

Latest Patents

Among his latest inventions is a patented process for forming a polysilicon electrode in a trench. This innovation pertains to a semiconductor device memory array that incorporates a multiplicity of field effect transistor DRAM devices arranged in an array. Each of these DRAM devices is strategically paired with a non-volatile EEPROM cell, which is disposed within a shallow trench running between the DRAM devices. This design allows for shared drain diffusion between each DRAM-EEPROM pair. Notably, the EEPROM cells feature discontinuous laterally disposed floating gate polysilicon electrodes that work in conjunction with continuous horizontally disposed program and recall gate polysilicon electrodes. The inventive process ensures that the floating gate is effectively separated from the program and recall gates by a silicon-rich nitride, ultimately enhancing the density of shadow RAMs.

Another notable patent focuses on a fast check bit write for a semiconductor memory. This memory device, equipped with an on-chip Error Correction Code (ECC) system, has an array of memory cells featuring varied transistor sizes to achieve faster access speeds. Regular data bits are strategically written into standard memory cells, while check bits are assigned to the faster cells, compensating for any delays in calculating the check bits.

Career Highlights

Hsing-San Lee is currently associated with the International Business Machines Corporation (IBM), where he applies his expertise in semiconductor technologies. His work has significantly impacted the way memory systems are designed, improving efficiency in data storage and retrieval.

Collaborations

Throughout his career, Lee has collaborated with notable colleagues, including Albert Stephan Bergendahl and Claude Louis Bertin. These partnerships have fostered an environment of innovation, allowing for the exchange of ideas that have driven advancements in their respective fields.

Conclusion

Hsing-San Lee's contributions to semiconductor technology showcase his innovative spirit and dedication to improving memory systems. With a robust patent portfolio and a strong collaborative network, Lee continues to push the boundaries of what is possible in the realm of electronics and memory devices, solidifying his reputation as a key figure in the industry.