Hsing-Hua Sun

Title: Hsing-Hua Sun: Innovator in Semiconductor Technology

Introduction

Hsing-Hua Sun is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs and patents. His work has been instrumental in advancing the capabilities of electronic devices.

Latest Patents

Hsing-Hua Sun holds a patent for a lateral diffused metal oxide semiconductor device. This exemplary device includes a first-type substrate, a gate oxide film disposed on the substrate, and a poly gate on the gate oxide film. It features a first second-type slightly doped region acting as a well, a first first-type highly doped region acting as a body, and various highly doped regions functioning as source and drain. This invention showcases his expertise in semiconductor design and engineering.

Career Highlights

Hsing-Hua Sun is currently employed at Fitipower Integrated Technology, Inc., where he continues to innovate in the semiconductor industry. His work has garnered attention for its technical depth and practical applications in modern electronics. He has successfully contributed to the development of advanced semiconductor devices that enhance performance and efficiency.

Collaborations

Hsing-Hua has collaborated with notable colleagues such as Chyh-Yih Chang and Tsuan-Lun Lung. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas within the field.

Conclusion

Hsing-Hua Sun is a key figure in semiconductor technology, with a patent that exemplifies his innovative spirit. His contributions continue to shape the future of electronic devices, making him a valuable asset to the industry.