The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Jun. 05, 2008
Chyh-yih Chang, Hsinchu, TW;
Hsing-hua Sun, Hsinchu, TW;
Tsuan-lun Lung, Hsinchu, TW;
Chen-ming Chiu, Hsinchu, TW;
Chyh-Yih Chang, Hsinchu, TW;
Hsing-Hua Sun, Hsinchu, TW;
Tsuan-Lun Lung, Hsinchu, TW;
Chen-Ming Chiu, Hsinchu, TW;
Fitipower Integrated Technology, Inc., Miaoli County, TW;
Abstract
An exemplary lateral diffused metal oxide semiconductor device includes a first-type substrate, a gate oxide film disposed on the first-type substrate, a poly gate disposed on the gate oxide film, a first second-type slightly doped region formed in the first-type substrate and acting as a well, a first first-type highly doped region formed in the well and acting as a body, a first second-type highly doped region formed in the body and acting as a source, a second second-type highly doped region formed in the well and acting as a drain, a second first-type highly doped region formed in the body, and a first first-type doped region formed in the body and is beneath the source.