Hsinchu, Taiwan

Tsuan-Lun Lung


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Tsuan-Lun Lung: Innovator in Semiconductor Technology

Introduction

Tsuan-Lun Lung is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative designs and patents. His work has been instrumental in advancing the capabilities of electronic devices.

Latest Patents

Tsuan-Lun Lung holds a patent for a lateral diffused metal oxide semiconductor device. This exemplary device includes a first-type substrate, a gate oxide film disposed on the substrate, and a poly gate on the gate oxide film. It features a first second-type slightly doped region acting as a well, a first first-type highly doped region acting as a body, and a first second-type highly doped region acting as a source. Additionally, it includes a second second-type highly doped region acting as a drain and a second first-type highly doped region formed in the body.

Career Highlights

Tsuan-Lun Lung is currently employed at Fitipower Integrated Technology, Inc., where he continues to innovate in the semiconductor industry. His work has garnered attention for its technical depth and practical applications in modern electronics.

Collaborations

Throughout his career, Tsuan-Lun Lung has collaborated with notable colleagues, including Chyh-Yih Chang and Hsing-Hua Sun. These collaborations have further enriched his contributions to the field.

Conclusion

Tsuan-Lun Lung's work in semiconductor technology exemplifies the spirit of innovation and dedication to advancing electronic devices. His patent and ongoing contributions continue to shape the future of the industry.

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