Hsinchu, Taiwan

Hsin-Pin Huang

This inventor holds 1 USPTO granted patent. Top assignee: Inotera Memories, Inc.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsin-Pin Huang. Retrieved from https://idiyas.com/inventor/hsin-pin-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2016

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Hsin-Pin Huang: Innovator in Semiconductor Technology

Introduction

Hsin-Pin Huang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique patent that enhances the efficiency of semiconductor devices.

Latest Patents

Hsin-Pin Huang holds a patent for a "Split contact structure and fabrication method thereof." This invention includes a semiconductor substrate with a major surface, featuring upwardly protruding structures and cell contact regions. The design allows for improved contact structures that enhance the performance of semiconductor devices.

Career Highlights

Hsin-Pin Huang is currently employed at Inotera Memories, Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of memory devices.

Collaborations

Hsin-Pin Huang has collaborated with talented coworkers, including Cheng-Yeh Hsu and Chih-Hao Cheng. These partnerships have fostered a creative environment that encourages innovation and technological advancement.

Conclusion

Hsin-Pin Huang's contributions to semiconductor technology through his patent and work at Inotera Memories, Inc. highlight his role as a key innovator in the field. His efforts continue to shape the future of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…