The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

May. 24, 2015
Applicant:

Inotera Memories, Inc., Taoyuan, TW;

Inventors:

Cheng-Yeh Hsu, New Taipei, TW;

Hsin-Pin Huang, Hsinchu County, TW;

Chih-Hao Cheng, New Taipei, TW;

Assignee:

INOTERA MEMORIES, INC., Guishan Dist., Taoyuan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 23/53209 (2013.01); H01L 23/53295 (2013.01); H01L 27/10844 (2013.01);
Abstract

A split contact structure includes a semiconductor substrate having a major surface; a first upwardly protruding structure disposed on the major surface; a first cell contact region in the major surface and being close to the first upwardly protruding structure; a second upwardly protruding structure disposed on the major surface; a second cell contact region in the major surface and being close to the second upwardly protruding structure; a first patterned layer stacked on the first upwardly protruding structure; a second patterned layer stacked on the first upwardly protruding structure; a first contact structure disposed on a sidewall of the first upwardly protruding structure and being in direct contact with the first cell contact region; and a second contact structure disposed on a sidewall of the second upwardly protruding structure and being in direct contact with the second cell contact region.


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