Hsin-li Cheng

Title: Hsin-li Cheng: Innovator in Semiconductor Technology

Introduction

Hsin-li Cheng is a prominent inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative approach to manufacturing semiconductor structures.

Latest Patents

Hsin-li Cheng's latest patents include a method of manufacturing a semiconductor structure. This method involves forming an insulation region in a substrate to define an active region, creating a gate structure across the active region, and forming a source or drain region that adjoins the insulation region. Additionally, a resist protective dielectric film is formed, which overlaps the interface between the source or drain region and the insulation region, exposing portions of both the source or drain region and the gate structure. Another notable patent describes a semiconductor structure that includes a semiconductor substrate, a serpentine-shaped resistor, and a MOS transistor. The serpentine-shaped resistor is positioned over the isolation structure and extends in a length direction, with a width of at least 3.6 μm.

Career Highlights

Hsin-li Cheng is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work focuses on advancing semiconductor manufacturing techniques, contributing to the company's reputation for innovation and excellence.

Collaborations

Hsin-li Cheng collaborates with talented individuals such as Yu-Chi Chang and YingKit Felix Tsui. Their combined expertise fosters a creative environment that drives technological advancements in semiconductor research and development.

Conclusion

Hsin-li Cheng's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His innovative methods and structures continue to shape the future of semiconductor manufacturing.