Hsin-Li Cheng

Title: Hsin-Li Cheng: Innovator in Semiconductor Technology

Introduction

Hsin-Li Cheng is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches to solving complex engineering challenges.

Latest Patents

One of Hsin-Li Cheng's latest patents is the "Damascene local interconnect process." This invention discloses a novel method to avoid junction leakage caused by poor interface of the interconnection with isolation edges. The process involves several steps, including forming a first dielectric layer over the substrate surface, creating an interconnection that spans over active areas, and filling contact holes with conductive plugs to connect these areas effectively.

Another significant patent is the "Method of doing ESD protective device ion implant without additional photo mask." This method describes the formation of an ESD protective transistor through ion implantation into the drain contact hole. The process is designed to enhance current tolerance and punchthrough ability, utilizing both p-type and n-type ions to optimize the performance of the transistor.

Career Highlights

Hsin-Li Cheng is currently employed at Worldwide Semiconductor Manufacturing Corporation, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing processes that improve device reliability and performance.

Collaborations

Hsin-Li Cheng has collaborated with notable colleagues, including Chang-Da Yang and Ping-Wei Wang, who contribute to the dynamic research environment at their workplace.

Conclusion

Hsin-Li Cheng's contributions to semiconductor technology through his innovative patents reflect his expertise and commitment to advancing the field. His work continues to influence the industry and pave the way for future innovations.