Santa Clara, CA, United States of America

Hsin-Jung Yu

This inventor holds 2 USPTO granted patents and 9 published patent applications. Top assignee: Applied Materials, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsin-Jung Yu. Retrieved from https://idiyas.com/inventor/hsin-jung-yu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Hsin-Jung Yu: Innovator in Semiconductor Technology

Introduction

Hsin-Jung Yu is a prominent inventor based in Santa Clara, CA (US). He has made significant contributions to the field of semiconductor devices, particularly through his innovative patent that addresses the manufacturing and processing of electronic devices. His work is characterized by a focus on improving device performance and reliability while meeting stringent requirements.

Latest Patents

Hsin-Jung Yu holds a patent for an "Integrated dipole region for transistor." This patent describes methods of manufacturing and processing semiconductor devices. The embodiments of this disclosure provide electronic devices that meet reduced thickness, lower thermal budget, and Vt requirements. The devices feature a source region, a drain region, and a channel that separates them. Additionally, they include an interfacial layer on the channel's top surface, a high-κ dielectric layer, a dipole layer, and a capping layer. Notably, the dipole layer may comprise a metal oxynitride, such as aluminum oxynitride (AlON). The methods also involve annealing the substrate to drive atoms from the dipole layer into the interfacial layer or the high-κ dielectric layer.

Career Highlights

Hsin-Jung Yu is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work at Applied Materials has allowed him to contribute to advancements in electronic device technology. With a focus on innovation, he has successfully developed methods that enhance the performance and reliability of semiconductor devices.

Collaborations

Hsin-Jung Yu has collaborated with notable colleagues, including Geetika Bajaj and Tianyi Huang. These collaborations have fostered a productive environment for innovation and have contributed to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Hsin-Jung Yu is a key figure in the semiconductor industry, with a patent that showcases his innovative approach to electronic device manufacturing. His contributions continue to influence the development of advanced technologies that meet the demands of modern electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…