This inventor holds 2 USPTO granted patents and 9 published patent applications. Top assignee: Applied Materials, Inc.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Hsin-Jung Yu: Innovator in Semiconductor Technology
Introduction
Hsin-Jung Yu is a prominent inventor based in Santa Clara, CA (US). He has made significant contributions to the field of semiconductor devices, particularly through his innovative patent that addresses the manufacturing and processing of electronic devices. His work is characterized by a focus on improving device performance and reliability while meeting stringent requirements.
Latest Patents
Hsin-Jung Yu holds a patent for an "Integrated dipole region for transistor." This patent describes methods of manufacturing and processing semiconductor devices. The embodiments of this disclosure provide electronic devices that meet reduced thickness, lower thermal budget, and Vt requirements. The devices feature a source region, a drain region, and a channel that separates them. Additionally, they include an interfacial layer on the channel's top surface, a high-κ dielectric layer, a dipole layer, and a capping layer. Notably, the dipole layer may comprise a metal oxynitride, such as aluminum oxynitride (AlON). The methods also involve annealing the substrate to drive atoms from the dipole layer into the interfacial layer or the high-κ dielectric layer.
Career Highlights
Hsin-Jung Yu is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work at Applied Materials has allowed him to contribute to advancements in electronic device technology. With a focus on innovation, he has successfully developed methods that enhance the performance and reliability of semiconductor devices.
Collaborations
Hsin-Jung Yu has collaborated with notable colleagues, including Geetika Bajaj and Tianyi Huang. These collaborations have fostered a productive environment for innovation and have contributed to the development of cutting-edge technologies in the semiconductor field.
Conclusion
Hsin-Jung Yu is a key figure in the semiconductor industry, with a patent that showcases his innovative approach to electronic device manufacturing. His contributions continue to influence the development of advanced technologies that meet the demands of modern electronics.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
