The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Apr. 28, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Tengzhou MA, San Jose, CA (US);
Geetika Bajaj, Cupertino, CA (US);
Debaditya Chatterjee, Sunnyvale, CA (US);
Hsin-Jung Yu, Santa Clara, CA (US);
Pei Hsuan Lin, Millbrae, CA (US);
Yixiong Yang, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of manufacturing electronic devices are described. Embodiments of the present disclosure advantageously provide methods of manufacturing electronic devices that meet reduced thickness, reduced leakage, lower thermal budget, and Vrequirements (including multi-V), and have improved device performance and reliability. The method comprises forming a P-dipole stack and an N-dipole stack on a semiconductor substrate by: depositing an interfacial layer (e.g., silicon oxide (SiOx)) on the top surface of the channel; depositing a hafnium-containing layer comprising hafnium oxide (HfOx) and having a thickness of less than or equal to 5 Å on the interfacial layer; and depositing a dipole layer comprising lanthanum nitride (LaN) on the hafnium-containing layer.