Sunnyvale, CA, United States of America

Debaditya Chatterjee

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Applied Materials, Inc.. Active years: 2026.

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Debaditya Chatterjee: Innovator in Semiconductor Technology

Introduction

Debaditya Chatterjee is a prominent inventor based in Sunnyvale, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of electronic devices. His innovative approaches have led to advancements that enhance device performance and reliability.

Latest Patents

Debaditya holds a patent for a "Multi-threshold voltage integration scheme for semiconductor devices." This patent describes methods of manufacturing electronic devices that achieve reduced thickness, lower leakage, and improved thermal management. The methods outlined in his patent include forming a P-dipole stack and an N-dipole stack on a semiconductor substrate. Key steps involve depositing an interfacial layer, a hafnium-containing layer, and a dipole layer, all of which contribute to enhanced device performance.

Career Highlights

Debaditya Chatterjee is currently employed at Applied Materials, Inc., where he continues to push the boundaries of semiconductor technology. His work focuses on developing methods that meet the evolving demands of electronic devices in terms of performance and efficiency.

Collaborations

Debaditya has collaborated with notable colleagues, including Srinivas Gandikota and Tengzhou Ma. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Debaditya Chatterjee's contributions to semiconductor technology exemplify the spirit of innovation. His patent and work at Applied Materials, Inc. highlight his commitment to advancing electronic device manufacturing.

Profile summary based on public USPTO records.
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