This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Realtek Semiconductor Inc.. Active years: 2022.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2022
Title: Hsin-Chan Hsieh: Innovator in Electromagnetic Band Gap Structures
Introduction
Hsin-Chan Hsieh is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of electromagnetic technology, particularly through his innovative patent.
Latest Patents
Hsieh holds a patent for an electromagnetic band gap structure apparatus. This apparatus includes a first conducting layer with at least one first slot, each arranged with a planar conductor unit coupled to a first via. Additionally, it features a second conducting layer parallel to the first, which has a second slot arranged with at least one planar transmission line unit. Each of these units is interconnected through vias, enhancing the functionality of the apparatus.
Career Highlights
Hsin-Chan Hsieh is associated with Realtek Semiconductor Inc., a prominent company in the semiconductor industry. His work at Realtek has allowed him to focus on advancing technologies that leverage electromagnetic principles.
Collaborations
Hsieh has collaborated with notable colleagues, including Ruey-Beei Wu and Shih-Hung Wang. These partnerships have contributed to the development of innovative solutions in their field.
Conclusion
Hsin-Chan Hsieh's contributions to electromagnetic technology through his patent and work at Realtek Semiconductor Inc. highlight his role as a key innovator in the industry. His advancements continue to influence the development of new technologies.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile