Hsienshih Chu

Title: Hsienshih Chu: Innovator in Semiconductor Technology

Introduction

Hsienshih Chu is a notable inventor based in Quanzhou, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique patent that addresses critical challenges in the industry.

Latest Patents

Hsienshih Chu holds a patent for a shallow trench isolating structure and semiconductor device. This invention provides a solution to the difficulties associated with filling shallow trench isolating structures. The patent describes a trench isolating structure formed in a substrate, which includes a first and a second part. The first part features a side wall with a specific slope and roughness, while the second part has a steeper slope and greater roughness. This design effectively prevents the undersized available space of the substrate's surface.

Career Highlights

Hsienshih Chu is currently employed at Fujian Jinhua Integrated Circuit Co., Ltd. His work at this company has allowed him to further his research and development in semiconductor devices. His contributions have been instrumental in advancing the technology used in this field.

Collaborations

Hsienshih Chu has collaborated with notable colleagues, including Dehao Huang and Yunfan Chou. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Hsienshih Chu's contributions to semiconductor technology through his patent and work at Fujian Jinhua Integrated Circuit Co., Ltd. highlight his role as a key innovator in the industry. His efforts continue to influence advancements in semiconductor devices.