Edison, NJ, United States of America

Hsien-Hsin Tung

This inventor holds 8 USPTO granted patents and 2 published patent applications, plus 2 CIPO patents and 1 EPO patent. Top assignees: Merck Sharp + Dohme Corp., Merck + Co., Inc., Acryspharm LLC. Active years: 1991-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsien-Hsin Tung. Retrieved from https://idiyas.com/inventor/hsien-hsin-tung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8 

% Patents Active = 100.0


 

Average Co-Inventor Count = 4.3

ph-index = 3

Forward Citations = 42(Granted Patents)


Location History:

  • Grayslake, IL (US) (2012)
  • Edison, NJ (US) (2006 - 2013)
  • Scotch Plains, NJ (US) (1991 - 2020)

Company Filing History:


Years Active: 1991-2020

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8 patents (USPTO):Explore Patents

Title: The Innovative Journey of Hsien-Hsin Tung

Introduction: Hsien-Hsin Tung is a renowned inventor based in Edison, NJ, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tung holds several patents in the areas of semiconductor technology, artificial intelligence, and renewable energy, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Tung has worked with leading tech companies, research institutions, and universities, playing a pivotal role in developing cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout his career, Tung has collaborated with top engineers, scientists, and researchers, fostering a culture of innovation and excellence in all his projects. His collaborative efforts have led to the successful implementation of numerous groundbreaking inventions.

Conclusion: Hsien-Hsin Tung's passion for innovation, coupled with his technical expertise and collaborative approach, continues to drive advancements in technology and inspire the next generation of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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