Hsien-Chieh Hsiao

Title: Hsien-Chieh Hsiao: Innovator in Physical Vapor Deposition Technology

Introduction

Hsien-Chieh Hsiao is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the area of physical vapor deposition (PVD) technology. His innovative work has led to the development of a patented process that enhances the efficiency and effectiveness of PVD chambers.

Latest Patents

Hsien-Chieh Hsiao holds a patent for a "Process kit of physical vapor deposition chamber and fabricating method thereof." This patent describes a PVD chamber that includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target features a sputtering surface that interacts with a process region. The power supply is connected to the sputtering target, while the process kit has an inner surface that partially encloses the process region. Notably, the liner layer on the inner surface of the process kit has a surface roughness (Rz) that falls within the range of 50-200 µm. This innovation is crucial for improving the performance of PVD processes.

Career Highlights

Hsien-Chieh Hsiao is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this prestigious company has allowed him to apply his expertise in PVD technology and contribute to advancements in semiconductor manufacturing.

Collaborations

Hsien-Chieh has collaborated with esteemed colleagues such as Shih-Wei Bih and Wei-Jen Chen. These collaborations have fostered a productive environment for innovation and have led to further advancements in their respective fields.

Conclusion

Hsien-Chieh Hsiao is a prominent inventor whose work in physical vapor deposition technology has made a significant impact on the semiconductor industry. His patented innovations continue to drive advancements in manufacturing processes, showcasing his dedication to improving technology.