San Diego, CA, United States of America

Hsiao-Tsung Yen

This inventor holds 1 USPTO granted patent and 6 published patent applications. Top assignee: Qualcomm Incorporated. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsiao-Tsung Yen. Retrieved from https://idiyas.com/inventor/hsiao-tsung-yen-c11nfis2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hsiao-Tsung Yen: Innovator in Integrated Device Technology

Introduction

Hsiao-Tsung Yen is a prominent inventor based in San Diego, CA. He is known for his contributions to the field of integrated devices, particularly in the design of stacked inductors with low or no mutual inductance. His innovative work has led to significant advancements in electronic device technology.

Latest Patents

Hsiao-Tsung Yen holds a patent for an "Integrated device comprising stacked inductors with low or no mutual inductance." This patent describes an integrated device that includes a die substrate, a die interconnection portion, and a stacked inductor. The stacked inductor consists of multiple spirals that form distinct shapes, enhancing the device's functionality and efficiency.

Career Highlights

Yen is currently employed at Qualcomm Incorporated, a leading company in telecommunications and semiconductor technology. His work at Qualcomm has allowed him to push the boundaries of innovation in integrated device design.

Collaborations

Throughout his career, Hsiao-Tsung Yen has collaborated with notable colleagues, including Xingyi Hua and Jeongil Jay Kim. These collaborations have contributed to the advancement of technology in their respective fields.

Conclusion

Hsiao-Tsung Yen's contributions to integrated device technology exemplify the spirit of innovation. His patent and work at Qualcomm highlight his role as a key player in the advancement of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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