The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Mar. 24, 2023
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Hsiao-Tsung Yen, San Diego, CA (US);

Xingyi Hua, San Diego, CA (US);

Jeongil Jay Kim, San Diego, CA (US);

Assignee:

QUALCOMM INCORPORATED, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/40 (2026.01); H10D 1/20 (2025.01); H10W 70/05 (2026.01); H10W 70/09 (2026.01); H10W 70/60 (2026.01); H10W 70/652 (2026.01); H10W 72/00 (2026.01); H10W 72/20 (2026.01); H10W 72/29 (2026.01); H10W 72/90 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/497 (2026.01); H10D 1/20 (2025.01); H10W 70/05 (2026.01); H10W 70/09 (2026.01); H10W 70/60 (2026.01); H10W 70/652 (2026.01); H10W 72/01257 (2026.01); H10W 72/01935 (2026.01); H10W 72/242 (2026.01); H10W 72/29 (2026.01); H10W 72/9415 (2026.01); H10W 90/724 (2026.01);
Abstract

An integrated device comprising a die substrate, a die interconnection portion coupled to the die substrate, and a stacked inductor that includes a first-shaped inductor and a second-shaped inductor. The stacked inductor may include a first spiral comprising a first origin and a first tail, a second spiral comprising a second origin and a second tail, a third spiral comprising a third origin and a third tail and a fourth spiral comprising a fourth origin and a fourth tail. The first spiral, the second spiral, the third spiral and the fourth spiral may form the first-shaped inductor and the second-shaped inductor. The stacked inductor may be located in the die interconnection.


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