Hsiao-Feng Huang

Title: Hsiao-Feng Huang: Innovator in Graphene Technology

Introduction

Hsiao-Feng Huang is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of materials science, particularly in the development of graphene technologies. With a total of 3 patents to his name, Huang's work focuses on innovative methods and applications that enhance energy storage and fingerprint recognition technologies.

Latest Patents

Huang's latest patents include a method for fabricating a graphene electrode, which features a unique structure comprising a metal foil, a non-doped graphene layer, and a hetero-atom doped graphene layer. This innovative design allows the hetero-atom doped graphene layer to be effectively separated from the metal foil by the non-doped graphene layer. Additionally, he has developed a press sheet for fingerprint readers, which consists of a transparent substrate, a microstructure layer, and a diffusion layer. The transparent substrate is designed with a first surface that faces an optical imaging apparatus, while the microstructure layer is strategically placed on the first surface to enhance functionality.

Career Highlights

Hsiao-Feng Huang has worked with notable organizations such as the Industrial Technology Research Institute and Gingy Technology Inc. His experience in these institutions has allowed him to refine his skills and contribute to groundbreaking advancements in technology.

Collaborations

Huang has collaborated with esteemed colleagues, including Ping-Chen Chen and Chun-Chen Chiang. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Hsiao-Feng Huang's contributions to graphene technology and fingerprint recognition systems highlight his role as a leading inventor in his field. His innovative patents and collaborations reflect a commitment to advancing technology for practical applications.