Sunnyvale, CA, United States of America

Houshmand Farzad

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Houshmand Farzad. Retrieved from https://idiyas.com/inventor/houshmand-farzad

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Houshmand Farzad: Inventor in Semiconductor Processing

Introduction

Houshmand Farzad is an inventor based in Sunnyvale, California, and is associated with Applied Materials, Inc. His patent work concerns plasma-generation and gas-injection technology for substrate processing chambers.

Latest Patents

The available information identifies one patent associated with Farzad: Plasma Generator and Injector Assembly for a Processing Chamber, and Related Methods. The invention describes a processing chamber with a plasma generator that creates a plasma volume between two housings, along with a gas inlet connected to a gas source. An injector, fluidly connected to the generator, directs material through openings arranged in channels. A mount arm connects the injector to the generator assembly. The patent record lists 1 patent.

Career Highlights

Farzad’s disclosed invention addresses the design of plasma-generation and injector components for processing chambers. His work is associated with Applied Materials, Inc., a company active in semiconductor manufacturing equipment.

Collaborations

Mukhles Sowwan is identified as Farzad’s coworker. The available information does not specify their roles or describe a particular joint project.

Conclusion

Houshmand Farzad’s patent focuses on integrating a plasma generator and injector assembly for use in substrate processing chambers, reflecting his connection to semiconductor-processing innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…