Company Filing History:
Years Active: 2015-2016
Title: Hounien Chen: Innovator in Flash Memory Technology
Introduction
Hounien Chen is a notable inventor based in Newark, CA (US). He has made significant contributions to the field of non-volatile memory devices, holding a total of 2 patents. His work focuses on improving the efficiency and reliability of flash memory technology.
Latest Patents
One of Hounien Chen's latest patents is an innovative erase algorithm for flash memory. This non-volatile memory device includes a sector pass/fail indicator circuit that is designed to store a pass/fail indicator for each sector in a first block of memory cells. The pass/fail indicator has a first value indicating that the respective sector has failed erase verification and a second value indicating that the respective sector has passed erase verification. The sector pass/fail indicator circuit sets the respective pass/fail indicators to the second value for one or more sectors in the first block after the respective sectors pass erase verification following a previous block erase operation of the first block. The first block is then subjected to a subsequent block erase operation where only word lines associated with the sectors having a pass/fail indicator with the first value are biased to the first bias voltage level.
Career Highlights
Hounien Chen is currently employed at Integrated Silicon Solution Incorporated, where he continues to develop cutting-edge technologies in the field of memory devices. His expertise in flash memory has positioned him as a key player in the industry.
Collaborations
Hounien has collaborated with several talented individuals in his field, including Jong Sang Lee and Kyoung Chon Jin. These collaborations have further enhanced his innovative work and contributed to the advancement of memory technology.
Conclusion
Hounien Chen's contributions to flash memory technology through his patents and collaborations highlight his role as an influential inventor in the tech industry. His work continues to pave the way for advancements in non-volatile memory devices.