This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Xiamen San'an Integrated Circuit Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: The Innovations of Houngchi Wei
Introduction
Houngchi Wei is a notable inventor based in Xiamen, China. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and efficiency of electronic devices.
Latest Patents
Houngchi Wei holds a patent for a bipolar transistor structure and radio frequency amplifier. This semiconductor device features an active region that includes a semiconductor layer with a collector layer, a base layer, and an emitter layer. The design incorporates an emitter mesa and an emitter electrode, along with dielectric layers that enhance the device's functionality. His innovative approach aims to improve the performance of radio frequency amplifiers.
Career Highlights
Wei is currently employed at Xiamen San'an Integrated Circuit Co., Ltd. His role at the company allows him to work on cutting-edge technologies in the semiconductor industry. His expertise has contributed to the advancement of integrated circuits and electronic components.
Collaborations
Throughout his career, Houngchi Wei has collaborated with talented individuals such as Zhangzhi Chen and Zhiming Liao. These partnerships have fostered innovation and have led to the development of advanced technologies in their field.
Conclusion
Houngchi Wei's contributions to semiconductor technology and his innovative patent demonstrate his commitment to advancing electronic devices. His work continues to influence the industry and pave the way for future innovations.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile