The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Jun. 20, 2025
Xiamen San'an Integrated Circuit Co., Ltd., Xiamen, CN;
Zhangzhi Chen, Xiamen, CN;
Zhiming Liao, Xiamen, CN;
Xiangyang He, Xiamen, CN;
Houngchi Wei, Xiamen, CN;
Chiachu Kuo, Xiamen, CN;
XIAMEN SAN'AN INTEGRATED CIRCUIT CO., LTD., Xiamen, CN;
Abstract
A semiconductor device includes an active region, including: a semiconductor layer, having a first surface, including a collector layer, a base layer and an emitter layer sequentially stacked, and the first surface being a surface of the emitter layer facing away from the base layer; an emitter mesa and an emitter electrode sequentially disposed on the emitter layer; a first dielectric layer, covering a top surface of the emitter electrode, extending along a side surface of the emitter electrode to cover part of the first surface exposed outside the emitter electrode, and defining a first opening; a second dielectric layer, covering the first dielectric layer, and defining a second opening connected to the first opening; and a base electrode, connected to the base layer through the first opening and the second opening, and extending to cover at least part of the second dielectric layer adjacent to the second opening.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile