This inventor holds 1 USPTO granted patent and 14 published patent applications and 1 EPO patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Hoseok Heo - Innovator in Vertical Memory Devices
Introduction
Hoseok Heo is an inventor based in Suwon-si, South Korea. He is known for his work in the field of memory devices, particularly focusing on vertical structure memory technologies. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.
Latest Patent Applications
Hoseok Heo has submitted several notable patent applications. One of his applications is for a "VERTICAL STRUCTURE MEMORY DEVICE." This device includes a cell string with a channel layer that extends perpendicularly to a substrate. It features a charge trap layer made of nitride doped with scandium (Sc), with a doping concentration ranging from 2 atomic percent (at %) to 10 at %.
Another significant application is for a "VERTICAL NAND FLASH MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME." This application describes a vertical NAND flash memory device that consists of multiple cell arrays. Each array includes a channel layer and an amorphous charge trap layer composed of aluminum oxide and an oxide of an element X, which may include Hf, Zr, La, Y, Ta, or Ga.
Conclusion
Hoseok Heo is an emerging inventor whose work in vertical memory devices showcases his innovative spirit and potential in the field of technology. His latest patent applications reflect a commitment to advancing memory device technology.