Goyang, South Korea

HoonJung Oh


Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: HoonJung Oh: Innovator in Semiconductor Technology

Introduction

HoonJung Oh is a notable inventor based in Goyang, South Korea. He has made significant contributions to the field of semiconductor technology, particularly with his innovative approaches to device manufacturing.

Latest Patents

HoonJung Oh holds a patent for a semiconductor device that features a structure capable of suppressing oxygen diffusion. The patent describes a semiconductor device that includes a substrate, a gate dielectric film formed on the substrate, a gate electrode on the gate dielectric film, and source and drain electrodes. A key aspect of this invention is the boundary between the gate dielectric film and the substrate, which is formed with a fluorine-terminated surface to act as a barrier against oxygen diffusion.

Career Highlights

HoonJung Oh is affiliated with Yonsei University, where he continues to engage in research and development in semiconductor technologies. His work has garnered attention for its potential applications in improving the performance and reliability of semiconductor devices.

Collaborations

HoonJung Oh has collaborated with notable colleagues, including DaeHong Ko and Sangmo Koo, contributing to advancements in their shared field of expertise.

Conclusion

HoonJung Oh's innovative work in semiconductor technology exemplifies the impact of research and development in enhancing device performance. His contributions are significant in the ongoing evolution of semiconductor manufacturing.

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