The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Feb. 09, 2015
Applicant:
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Inventors:
HoonJung Oh, Goyang, KR;
DaeHong Ko, Goyang, KR;
SangMo Koo, Seoul, KR;
InGeun Lee, Incheon, KR;
Hwan Lee, Seoul, KR;
DaeSub Byun, Seoul, KR;
HyunCheol Jang, Uijeongbu, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/0206 (2013.01); H01L 21/02046 (2013.01); H01L 21/02049 (2013.01); H01L 21/02063 (2013.01); H01L 21/02359 (2013.01); H01L 21/28185 (2013.01); H01L 21/28194 (2013.01); H01L 21/28506 (2013.01); H01L 29/51 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract
A semiconductor device is provided. The device includes a substrate; a gate dielectric film formed on the substrate; a gate electrode formed on the gate dielectric film, and source and drain electrodes, wherein a boundary between the gate dielectric film and the substrate is formed with an F (fluorine)-terminated surface to serve as a barrier for preventing oxygen diffusion.