DaeHong Ko

Title: Innovations of DaeHong Ko

Introduction

DaeHong Ko is a prominent inventor based in Goyang-si, South Korea. He has made significant contributions to the field of electronic devices and semiconductor technology. With a total of two patents to his name, his work reflects a deep understanding of advanced materials and their applications.

Latest Patents

DaeHong Ko's latest patents include an electronic device that features a topological insulator and a transition metal oxide. This electronic device may consist of a topological insulating layer with first and second surfaces facing each other, along with a transition metal oxide layer positioned on the first surface. The topological insulating layer is designed to have a thickness ranging from 1 nm to 10 nm. Another notable patent is for a semiconductor device that has a structure capable of suppressing oxygen diffusion. This device includes a substrate, a gate dielectric film formed on the substrate, a gate electrode on the gate dielectric film, and source and drain electrodes. A boundary between the gate dielectric film and the substrate is formed with an F (fluorine)-terminated surface, which serves as a barrier to prevent oxygen diffusion.

Career Highlights

DaeHong Ko is affiliated with Yonsei University, where he continues to engage in innovative research and development. His work at the university allows him to explore new technologies and contribute to the academic community.

Collaborations

Some of his notable coworkers include MannHo Cho and KwangSik Jeong. Their collaboration enhances the research output and fosters a creative environment for innovation.

Conclusion

DaeHong Ko's contributions to electronic devices and semiconductor technology highlight his expertise and innovative spirit. His patents reflect significant advancements in the field, showcasing the potential for future developments.