Seoul, South Korea

DaeSub Byun

This inventor holds 1 USPTO granted patent. Top assignee: Yonsei University. Active years: 2016.


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Innovations of DaeSub Byun in Semiconductor Technology

Introduction

DaeSub Byun is a notable inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly with his innovative approaches to device manufacturing.

Latest Patents

DaeSub Byun holds a patent for a semiconductor device that features a structure capable of suppressing oxygen diffusion. The patent describes a semiconductor device that includes a substrate, a gate dielectric film formed on the substrate, a gate electrode on the gate dielectric film, and source and drain electrodes. A key aspect of this invention is the boundary between the gate dielectric film and the substrate, which is formed with a fluorine-terminated surface to act as a barrier against oxygen diffusion.

Career Highlights

DaeSub Byun is affiliated with Yonsei University, where he continues to engage in research and development in semiconductor technologies. His work has garnered attention for its potential applications in improving the performance and reliability of semiconductor devices.

Collaborations

DaeSub Byun has collaborated with notable colleagues, including HoonJung Oh and DaeHong Ko, contributing to advancements in their shared field of expertise.

Conclusion

DaeSub Byun's innovative work in semiconductor technology exemplifies the importance of research and development in enhancing device performance. His contributions are paving the way for future advancements in the industry.

Profile summary based on public USPTO records.
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