Hwaseong, South Korea

Hoon Shin

This inventor holds 6 USPTO granted patents and 10 published patent applications and 1 EPO patent. Top assignees: Samsung Electronics Co., Ltd., Seoul National University, Samsung Electronics Ltd.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hoon Shin. Retrieved from https://idiyas.com/inventor/hoon-shin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.8

ph-index = 4

Forward Citations = 46(Granted Patents)


Location History:

  • Suwon-si, KR (2021)
  • Hwaseong-si, KR (2020 - 2023)

Company Filing History:


Years Active: 2020-2026

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6 patents (USPTO):Explore Patents

Title: The Innovative Journey of Hoon Shin

Introduction: Hoon Shin, a talented inventor hailing from Hwaseong-si, South Korea, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Hoon Shin's latest patents include advancements in artificial intelligence algorithms for autonomous vehicles and cutting-edge medical devices for minimally invasive surgeries.

Career Highlights: With a career spanning over two decades, Hoon Shin has worked with top research institutions and leading tech companies to bring his ideas to life. His expertise in machine learning and robotics has led to the development of revolutionary products.

Collaborations: Throughout his career, Hoon Shin has collaborated with renowned engineers, scientists, and designers to push the boundaries of innovation. His ability to work in multidisciplinary teams has resulted in successful projects that have garnered international recognition.

Conclusion: Hoon Shin's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors. His impact on the tech industry is truly remarkable, and his legacy will undoubtedly shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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