The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Sep. 25, 2023
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Seoul National University R&db Foundation, Seoul, KR;

Inventors:

Hoon Shin, Suwon-si, KR;

Jaewook Lee, Seoul, KR;

Donghwee Kim, Suwon-si, KR;

Rihae Park, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/12 (2006.01); G11C 7/08 (2006.01); G11C 7/10 (2006.01); G11C 7/14 (2006.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G11C 7/08 (2013.01); G11C 7/1069 (2013.01); G11C 7/14 (2013.01);
Abstract

A memory device and an operating method of a memory controller are described in which the operating method includes determining that a NOT operation for data of a cell is to be performed by the memory device; forming, in a bit line connected to the cell, a reference voltage between a first voltage corresponding to the data and a second voltage corresponding to inversion data of the data; forming, in the bit line, a third voltage between the second voltage and the reference voltage by connecting the bit line and a bit line bar; forming the reference voltage in the bit line bar; and sensing the inversion data based on the third voltage formed in the bit line and the reference voltage formed in the bit line bar, wherein the inversion data comprises an output of the NOT operation for the data of the cell.


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