This inventor holds 5 USPTO granted patents and 1 published patent application. Top assignees: Samsung Electronics Co., Ltd., Samsung Electronics Ltd.. Active years: 2024-2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:

Years Active: 2024-2026
Title: Hoon Jo: Innovator in Flash Memory Technology
Introduction
Hoon Jo is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of flash memory technology, holding a total of 5 patents. His work focuses on enhancing the reliability and efficiency of memory devices, particularly in relation to operating system data.
Latest Patents
Hoon Jo's latest patents include innovative methods for operating flash memory to reduce reliability degradation of operating system data during the surface mount technology (SMT) process. One of his notable inventions provides apparatuses and methods for programming OS data before the SMT process. This method involves erasing memory cells, applying a pre-program voltage to increase threshold voltages, and performing multi-bit programming of OS data. Another patent outlines an operating method for storage devices that includes obtaining points by searching for valley points between threshold voltage distributions, calculating voltage levels, and classifying memory cells into coupling patterns for efficient read operations.
Career Highlights
Hoon Jo is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of flash memory technology. His work has been instrumental in developing solutions that address the challenges faced by modern memory devices.
Collaborations
Hoon Jo collaborates with talented coworkers, including Hyojin Ahn and Seoyeong Lee, who contribute to the innovative projects at Samsung Electronics.
Conclusion
Hoon Jo's contributions to flash memory technology exemplify the importance of innovation in the tech industry. His patents not only enhance the reliability of memory devices but also pave the way for future advancements in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile