The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Jun. 13, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyojin Ahn, Suwon-si, KR;

Seongkuk Kim, Suwon-si, KR;

Dongwoo Shin, Suwon-si, KR;

Seoyeong Lee, Suwon-si, KR;

Changjun Lee, Suwon-si, KR;

Hoon Jo, Suwon-si, KR;

Assignee:
Attorneys:

Samsung Electronics Co., Ltd.

JOHN WELCH

EDWARD GATES

JASON HONEYMAN

EDMUND WALSH

JAMES MORRIS

RANDY PRITZKER

RICHARD GIUNTA

TIMOTHY OYER

DOUGLAS WOLF

ROBERT MALDONADO

NEIL FERRARO

JAMES HANIFIN

ROBERT HUNT

HELEN LOCKHART

JOHN VAN AMSTERDAM

STEPHEN RABINOWITZ

PATRICK WALLER

SCOTT A MCKEOWN

EDWARD RUSSAVAGE

ADAM WICHMAN

MICHAEL POMIANEK

ROBERT WALAT

CHARLES BAKER

MARIA TREVISAN

ANDREW WILLIAMS

GERALD HRYCYSZYN

JENNIFER BUSH

MICHAEL RADER

JANICE VATLAND

TANI CHEN

MATTHEW GRADY

MELISSA BEEDE

ROQUE EL HAYEK

GREGORY NIEBERG

TONIA SAYOUR

GABRIEL MCCOOL

MICHAEL S PARSONS

NIDHI MALLA

JONATHAN ROSES

ROBERT JENSEN

JESSAMINE LEE

GEORGE T SCOTT

DANIEL YOUNG

ZACHARY PICCOLOMINI

THOMAS FRANKLIN

MARC JOHANNES

ROBERT SAHR

HEATHER DIPIETRANTONIO

VICTOR CHEUNG

BRANDON BLACKWELL

JASON BALICH

JOHN HARMON

ELISABETH HUNT

OONA JOHNSTONE

JENNIFER WANG

WILLIAM ZHANG

CARA DAWSON

DANIEL RUDOY

MARK J CONSILVIO

DAVID GESNER

LAURA ROGERS

MATTHEW DUFFEY

ZHIYUN GE

CURTIS POWELL

JIE XIANG

LIN LI

KEVIN MACDONALD

PHILIP HAMZIK

DIANA BORGAS

ANANT SARASWAT

ADAM ZEIGER

ELIZABETH BOEHM

WILLIAM L CZAPLYSKI

MICHELE MORESCO

DANIELLE C SAMBLANET

AMANDA VARRICHIONE

JESSICA VON REYN

NATHAN JACOBS

ANNE WEEKS

LINGYIN GE

SAAD ALAM

JOSEPH BOWLER

ELIZABETH MULSKI

HARRISON E SHECTER

ANDREW VARRENTI

FLORA LUO

SARAH C C SCHLOTTER

EVAN C JONES

ANDREW G MAHER

TYLER GODDARD

ROSHAN J PLAMTHOTTAM

CHARLOTTE STEWART-SLOAN

SHANGXING LU

SAMUEL L DOSKOCIL

JOHN C HOVESTADT

JOHN A OTTERBEIN

ANDREW MATHIS

COLIN BUSS

STEVEN HANNIGAN

EDWARD STANTON

KEVIN B CHANCELLOR

SAMUEL S KIM

WILLIAM LINDEMANN

CLAIRE LIDSTON

KYLEE A PROSSER

VICTORIA JULIAN

JILL L RYAN

CONOR J KAVANAGH

JOSEPH M NOREIKA

BENJAMIN J WALSH

ANDREW P SCHLAUS

ALLISON E MAYNE

EVAN S BENDER

ADRIENNE ZAGIEBOYLO

MAX D ZEGERS

SAMANTHA C COLLINS

KAREN GUADALUPE CRUZ

Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/16 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3409 (2013.01); G11C 11/5628 (2013.01); G11C 11/5635 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/16 (2013.01);
Abstract

The present disclosure provides apparatuses and methods for operating a flash memory for programming operating system (OS) data before an surface mount technology (SMT) process. In some embodiments, the method includes erasing a plurality of memory cells in a memory block, reducing a lateral charge loss of the plurality of memory cells due to high temperature degradation during the SMT process by applying a pre-program voltage to word lines coupled to the memory block, and performing multi-bit programming of the OS data in the plurality of memory cells, prior to performing the SMT process. The applying of the pre-program voltage causes threshold voltages of the plurality of memory cells to increase.


Find Patent Forward Citations

Loading…