Shanghai, China

Hongyan Li

This inventor holds 4 USPTO granted patents and 2 published patent applications. Top assignees: Micron Technology Incorporated, Marvell International Limited. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongyan Li. Retrieved from https://idiyas.com/inventor/hongyan-li-nqatt3rl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 75.0

Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2015-2026

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4 patents (USPTO):Explore Patents

Title: Innovations of Hongyan Li

Introduction

Hongyan Li is a notable inventor based in Shanghai, China. She has made significant contributions to the field of technology, particularly in memory subsystems and magnetic core designs. With a total of 4 patents, her work showcases innovative approaches to performance management and magnetic materials.

Latest Patents

One of her latest patents is titled "Voltage-triggered performance throttling." This invention includes exemplary methods, apparatuses, and systems that feature a performance throttling manager. The manager controls performance levels of a memory subsystem using input voltages. It monitors input voltages to a memory device to determine a current input voltage value while the device operates at a first performance level. Upon detecting that the current input voltage value meets a threshold voltage value, the manager selects a second performance level that is lower than the first and throttles the performance of the memory device accordingly.

Another significant patent is "Magnetic core having flux paths with substantially equivalent reluctance." This patent describes magnetic cores that consist of a first magnetic material with a first magnetic permeability, forming part of the core's body. Additionally, a second magnetic material with a second magnetic permeability is positioned in a corner region of the body. The design allows for a plurality of magnetic flux paths of different overall lengths to traverse the corner region, ensuring that the corresponding magnetic reluctances are substantially equivalent.

Career Highlights

Hongyan Li has worked with prominent companies in the technology sector, including Marvell International Limited and Micron Technology Incorporated. Her experience in these organizations has contributed to her expertise and innovative capabilities in her field.

Collaborations

Some of her notable coworkers include George Shengshi Dai and Jesus Paz. Their collaboration has likely fostered an environment of creativity and innovation, further enhancing the impact of their collective work.

Conclusion

Hongyan Li's contributions to technology through her patents and career achievements highlight her role as a leading inventor in her field. Her innovative solutions in memory subsystems and magnetic materials continue to influence advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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