Wuxi, China

Hongxu Yang

This inventor holds 1 USPTO granted patent. Top assignee: Hua Hong Semiconductor (Wuxi) Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongxu Yang. Retrieved from https://idiyas.com/inventor/hongxu-yang-6ylba48g

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations by Hongxu Yang

Introduction

Hongxu Yang is a notable inventor based in Wuxi, China. He has made significant contributions to the field of semiconductor technology. His work focuses on developing innovative solutions that enhance the efficiency and effectiveness of electronic components.

Latest Patents

Hongxu Yang holds a patent for a "Digital isolator structure and method for forming the same." This patent outlines a method that includes providing a substrate, forming a first electrode plate on the substrate's surface, and creating a dielectric layer on the first electrode plate. The process involves etching the dielectric layer to expose the first electrode plate, forming a deep trench, and applying a connect layer and insulating layer. The method aims to reduce process steps and save costs associated with conductive materials. He has 1 patent to his name.

Career Highlights

Hongxu Yang is currently employed at Hua Hong Semiconductor (Wuxi) Limited. His role at the company allows him to apply his innovative ideas in a practical setting, contributing to advancements in semiconductor technology.

Collaborations

Hongxu Yang collaborates with various professionals in his field, including his coworker Hongfeng Jin. Their teamwork fosters an environment of innovation and creativity, leading to the development of cutting-edge technologies.

Conclusion

Hongxu Yang's contributions to the field of semiconductor technology through his innovative patent demonstrate his commitment to advancing electronic components. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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