Beijing, China

Hongwei Zhou

This inventor holds 2 USPTO granted patents. Top assignees: China University of Mining and Technology, Beijing, Freescale Semiconductor,inc.. Active years: 2011-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongwei Zhou. Retrieved from https://idiyas.com/inventor/hongwei-zhou-cc0aj2f6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.8

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2011-2023

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2 patents (USPTO):Explore Patents

Title: Innovations of Hongwei Zhou

Introduction

Hongwei Zhou is a notable inventor based in Beijing, China. He has made significant contributions to the fields of engineering and technology, particularly through his innovative patents. With a total of two patents to his name, Zhou has demonstrated a commitment to advancing scientific knowledge and practical applications.

Latest Patents

Zhou's latest patents include a "Pressure-preserving conventional triaxial compression loading apparatus and method for performing conventional triaxial compression test on pressure-preserving specimen using same." This apparatus is designed to enhance the accuracy and reliability of triaxial loading tests on fidelity specimens, which are crucial for studying the mechanical behavior of in-situ rock. The apparatus features a pressure vessel, piston rods, and an annular oil bag assembly, allowing for precise measurements during testing.

Another significant patent is the "High voltage TMOS semiconductor device with low gate charge structure and method of making." This TMOS device utilizes a semiconductor layer and strategically placed doped regions to reduce Miller capacitance, thereby improving performance. The innovative design of this device showcases Zhou's expertise in semiconductor technology.

Career Highlights

Throughout his career, Hongwei Zhou has worked with prominent organizations such as Freescale Semiconductor and the China University of Mining and Technology. His experience in these institutions has allowed him to collaborate on various projects that push the boundaries of technology and engineering.

Collaborations

Zhou has collaborated with notable colleagues, including Peilin Wang and Edouard De Frésart. These partnerships have contributed to the development of his innovative ideas and patents.

Conclusion

Hongwei Zhou's contributions to the fields of engineering and technology are evident through his patents and collaborations. His work continues to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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