Suwon, South Korea

Hongsun Hwang

This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2014-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongsun Hwang. Retrieved from https://idiyas.com/inventor/hongsun-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.5

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2014-2015

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2 patents (USPTO):Explore Patents

Title: Hongsun Hwang: Innovator in Semiconductor Technology

Introduction

Hongsun Hwang is a prominent inventor based in Suwon, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on advanced semiconductor devices and memory structures, showcasing his expertise and innovative spirit.

Latest Patents

Hwang's latest patents include groundbreaking inventions in semiconductor devices. One of his notable patents describes semiconductor devices that feature a vertical channel transistor. According to the patent, the semiconductor device comprises a plurality of active pillars protruding from a substrate. Each active pillar contains a channel region situated between upper and lower doped regions. A contact gate electrode faces the channel region and connects to a word line, which extends in a first direction. Additionally, a bit line is linked to the lower doped region and extends in a second direction. The device also includes a string body connection portion that connects the channel region of at least two adjacent active pillars.

Another significant patent involves semiconductor memory devices that incorporate vertical transistor structures. This semiconductor memory device may consist of a common source region on a substrate, an active pattern positioned between the substrate and the common source region, and a gate pattern facing a sidewall of the active pattern. Furthermore, it includes a gate dielectric pattern between the gate pattern and the active pattern, a variable resistance pattern between the common source region and the active pattern, and an interconnection line.

Career Highlights

Hongsun Hwang is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of semiconductor technology and contribute to the development of innovative products.

Collaborations

Hwang has collaborated with talented coworkers, including Sua Kim and Chulwoo Park. Their combined efforts have led to advancements in semiconductor technology and the successful development of new devices.

Conclusion

Hongsun Hwang is a distinguished inventor whose work in semiconductor technology has resulted in valuable patents and innovations. His contributions continue to shape the future of the industry, making him a key figure in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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