Samsung Electronics Co., Ltd.

Hongsun Hwang

Chulwoo Park

Sua Kim

Jin Ho Kim

Hyun-Woo Chung

Hak-soo Yu

Hyunho Choi

Sangbo Lee

According to example embodiments, a semiconductor device includes a plurality of active pillars protruding from a substrate. Each active pillar includes a channel region between upper and lower doped regions. A contact gate electrode faces the channel region and is connected to a word line. The word line extends in a first direction. A bit line is connected to the lower doped region and extends in a second direction. The semiconductor device further includes a string body connection portion that connects the channel region of at least two adjacent active pillars of the plurality of active pillars.

Semiconductor devices including a vertical channel transistor and methods of fabricating the same

A semiconductor memory device may include a common source region on a substrate, an active pattern between the substrate and the common source region, a gate pattern facing a sidewall of the active pattern, a gate dielectric pattern between the gate pattern and the active pattern, a variable resistance pattern between the common source region and the active pattern, and an interconnection line.

Semiconductor memory devices including vertical transistor structures

Growing community of inventors

Suwon-si, South Korea

Hongsun Hwang